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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5149 description high breakdown voltage- : v cbo = 1500v (min) high switching speed low saturation voltage built-in damper diode applications horizontal deflection output fo r medium resolution display color tv high speed switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current- continuous 8 a i cp collector current-pulse 16 a i b b base current- continuous 4 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5149 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 400ma ; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.3a b 5.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.3a b 1.5 v i cbo collector cutoff current v cb = 1500v ; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v ; i c = 0 66 200 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 8 25 h fe-2 dc current gain i c = 5a ; v ce = 5v 3.8 8.0 v ecf c-e diode forward voltage i f = 5a 1.8 v f t current-gain?bandwidth product i c = 0.1a ; v ce = 10v 2 mhz c ob output capacitance i e =0 ; v cb =10v; f test =1.0mhz 110 pf switching times t stg storage time 6.0 s t f fall time i cp = 5a, i b1( end ) = 1.1a ; f h = 31.5khz 0.5 s isc website www.iscsemi.cn 2 inchange semiconductor isc product specification isc silicon npn power transistor 2SC5149 isc website www.iscsemi.cn |
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